Modeling of Lateral Migration Mechanism of Holes in 3D NAND Flash Memory Charge Trap Layer during Retention Operation

In this paper, we analyzed lateral migration mechanism of holes (LM) in 3D NAND Flash memory during retention operation. Retention characteristics were investigated using Technology Computer-Aided Design (TCAD) simulation and modeled using Weibull cumulative distribution function (WCD). Time-constant (τ) at various temperatures were extracted through the modeled equation. Finally, the activation energy (E_a) of LM was extracted by applying to the Arrhenius equation.