I. Introduction
Silicon nanowires have a wide spectrum of promising applications, such as current field-effect transistors [1], [2], photovoltaics [3], energy conversion and storage [4] and qubits [5]. In our previous work, we have shown an extensive comparison between simulations and experimental results for JL-NWTs with -gated region and with a channel length of 150 nm [6]. In another study, we have discussed statistical simulation results based on an ensemble of 500 JL-NWTs, where each device is atomistically unique with random distribution of discreet dopants in the channels [7]. Results obtained from those previously reported works have allowed us to suggest an improvement of the device design, predict the device performance and to extract important Figures of Merit (FoM), such as OFF-current (IOFF) and ON-current (ION), subthreshold slope (SS) and voltage threshold (VTH).