Abstract:
This paper presents a low-cost gain error shaping (GES) technique that can substantially suppress the in-band interstage gain error in pipeline ADCs. It works for both cl...Show MoreMetadata
Abstract:
This paper presents a low-cost gain error shaping (GES) technique that can substantially suppress the in-band interstage gain error in pipeline ADCs. It works for both closed-loop and open-loop amplification. A prototype ADC with the proposed 2nd-order GES technique in 40nm CMOS achieves 75.8dB SNDR over 12.5MHz BW while operating at 100MS/s and consuming 1.54mW. It achieves 174.9dB Schreier FoM. The GES-related hardware occupies less than 2% of the core area.
Published in: 2019 Symposium on VLSI Circuits
Date of Conference: 09-14 June 2019
Date Added to IEEE Xplore: 29 July 2019
ISBN Information: