High Performance GeSn Photodiode on a 200 mm Ge-on-insulator Photonics Platform for Advanced Optoelectronic Integration with Ge CMOS Operating at 2 μm Band

We report the first demonstration of high performance germanium-tin (GeSn) multiple-quantum-well (MQW) photodiode (PD) on a 200 mm GeOI platform realized using a low temperature wafer bonding process. Record-low leakage of 25 mA/cm
²
was achieved for GeSn PDs using this new architecture. Both Ge p-and n-FinFETs were also realized on the GeOI platform to substantiate the promising monolithic integration of all GeOI-based photonics components with Ge CMOS on this architecture via top-down processing approach. This work paves way for advanced optoelectronic integrated circuits (OEIC) operating at 2 μm band and beyond using GeSn as photo detection material for communication and sensing applications.