A 40nm 2Mb ReRAM Macro with 85% Reduction in FORMING Time and 99% Reduction in Page-Write Time Using Auto-FORMING and Auto-Write Schemes

This work proposes (1) an auto-forming (AF) scheme to shorten the macro forming time
$(\text{T}_{\text{FM}-\text{M}})$
and testing costs; (2) an auto-RESET (ARST) scheme to shorten page-RESET time
$(\text{T}_{\text{W}-\text{PAGE}-\text{RST}})$
for expanding the applications of hidden-RESET operation in standby mode, and (3) an auto-SET (ASET) scheme to shorten page-write time
$(\text{T}_{\text{W}-\text{PAGE}})$
combined with hidden-RESET scheme. A fabricated 40nm 2Mb ReRAM macro achieved 85+% reduction in T
FM
-
M
, and
$99+\%$
reduction in
$\text{T}_{\text{W}}-\text{PAGE}$
for a page. For the first time, AF, ARST, and ASET schemes are demonstrated in silicon for ReRAM. Keywords: ReRAM, forming, page-write