Characteristics of p- and n-channel poly-Si/Si/sub 1-x/Ge/sub x//Si sandwiched conductivity modulated thin-film transistors

Both p- and n-channel poly-Si/Si/sub 1-x/Ge/sub x//Si sandwiched conductivity modulated thin-film transistors (CMTFTs) are demonstrated and experimentally characterized. The transistors use a poly-Si/Si/sub 1-x/Ge/sub x//Si sandwiched structure as the active layer to avoid the poor interface between the gate oxide and the poly-Si/sub 1-x/Ge/sub x/ material. Also an offset region placed between the channel and the drain is used to reduce the leakage current. Furthermore, the concept of conductivity modulation in the offset region is used to provide a high on-state current. Results show that the transistors provide a high on-state current as well as a low leakage current compared to those of conventional offset drain TFTs. The p- and n-channel CMTFTs can be combined to form CMOS drivers, which are very suitable for use in low temperature large area electronic systems on glass applications.