Reliability and modeling of GaN-based light emitting diode

To date, a considerable body of data has been published relative to III-V nitride light emitting diodes. These diodes typically employ a lateral carrier injection type structure due to an insulating sapphire substrate. The use of a lateral carrier injection type structure, however, can lead to nonuniform current spreading due to difficulties in growing a high quality material (Eliashevich et al, 1999). In this regard, we report on an attempt to develop a model for uniform current spreading during LED performance.