Memory devices utilizing resonant tunneling in nanocrystalline silicon superlattices

In this paper, we present a definitive experimental observation of resonant carrier tunneling in nanocrystalline Si-SiO/sub 2/ superlattices, and discuss utilization of our findings in memory devices. The paper gives an example of negative differential conductivity associated with hole tunneling in a 10 period 45 /spl Aring/ Si/15 /spl Aring/ SiO/sub 2/ superlattice, and summarizes the properties of nanocrystalline Si superlattice based memory device prototypes. The device properties, including operating voltage, endurance, retention time and dynamic leakage, are discussed.