Bandgap engineering in deep submicron vertical pMOSFETs

Bandgap engineering in SiGe heterojunction bipolar transistors (HBT) and high-mobility SiGe channel pMOSFETs significantly enhances the device performance. This study, for the first time, further explores the application of Si-SiGe heterostructures in tailoring MOSFET channel potentials for improving the performance of deep submicron pMOSFETs, and provides guidance for experimental work.