Effect of Band Non-Parabolicity on Energy Sub-Band Profile for Nano-Dimensional MOSFET

In this paper, the effect of band non-parabolicity on the sub bands of nano-dimensional junctionless MOSFET have been presented using analytical models. Hence, one and two dimensional confinements have been considered. The energy Eigen values along the direction of propagation and the direction of confinement have also been analyzed separately. Besides, the values of effective mass along the direction of propagation and the direction of confinement have also been detailed separately for energy calculations. Moreover, the effect of channel width and channel height variations along with the confinements has been studied. This study would be efficacious for the circuit level implementation of the of nano-dimensional MOSFET using different semiconductor materials.