Comparison of Linearity Performance of InAs Based DG-MOSFETs with Gate Stack, SiO2 and HfO2

This work demonstrates a comparative analysis of various types of Double-Gate MOSFET, aims at enhancing the analog, linearity performances and these devices are more protective to short-channel effects (SECs). We have studied the linearity performance of DG-MOSFET by considering channel material as InAs and simultaneously incorporating gate stack technique. Variations oxide materials by considering channel as InAs and finally their comparison were thoroughly studied to have a better understanding of different linearity parameters. Various Figure-of-merits(FOMs) such as trans-conductance factor, VIP2, VIP3, IIP3 are thoroughly analysed for various high-K oxide materials along with gate stack technology. From the simulation results it is found that the performances of the device changes with respect to change in different oxide materials and it is also inferred that gate stack technology has also significant effect in the linearity performances. In this work, we have used the (TCAD) simulations by 2D ATLAS, Silvaco International to carry out the simulations.