Demonstration of the Very Long Wavelength Infrared Type-II Superlattice InAs/InAsSb GaAs Immersed Photodetector Operating at Thermoelectric Cooling

In this letter, we report on the InAs/InAsSb type-II superlattice (T2SL) detector operating with 50% cut-off wavelength (λ
_c
) ~ 15 μm for temperatures (T) reached by three-stage thermoelectric (TE) cooling to minimize the detector's volume to reach size, weight, and power (SWaP) conditions. The presented device reaches detectivity (D*) ~ 10
⁹
Jones (λ
_c
~ 15 μm). These results are the first reported on single pixel T2SL InAs/InAsSb photoconductor with λ
_c
~ 15 μm where GaAs immersion lens (IL) was implemented and integrated with three-stage Peltier TE cooler.