High reliability 6500V IGBT with low-stress copper metallization

In this paper, the new copper metallization scheme for 6500V IGBT is proposed based on 8-inch IGBT technology platform, where the multilayer films consisting of barrier, seed, thick copper, and coating layer were systematically investigated (see Fig.1). Furthermore, the copper wire-bond technology was optimized. As a result, both low stress stacks and robust wire-bond interconnection were applied in 6500V IGBT modules which show good SOA performance, more than 20% higher surge current capability and fifteen times higher power cycling ability without sacrificing HTRB and HTGB performance.