Cu Double Side Plating Technology for High Performance and Reliable Si Power Devices

In this work, we have developed vertical Si power MOSFETs with high performance and high reliability by using Cu double side plating technology. 20 μ m thick Cu plating layers are formed on both sides of devices with 50 μ m thick Si substrate. In this structure, even though Si substrate is thinner, Safety Operating Area (SOA) is wider and the warpage of chip is smaller thanks to front and back side Cu plating layers.