Static and Dynamic Figures of Merits (FOM) for Superjunction MOSFETs

The introduction of the superjunction has challenged the well-known limit of silicon. In spite of its widespread use, and despite its correct application in classical power MOSFETs, Baliga's figure of merit no longer can be used to give an accurate picture of the material potential in power electronics. Fujihira has updated both the static and dynamic figures of merit, but, as the cell pitch of the SJ scale down, these figure of merits need to include the parasitic JFET effect and an analytical formulation of the gate-drain capacitance and its intricate dependence on the drain voltage. This work presents for the first-time new static and dynamic figure of merits which take into account the spectacular advances in the SJ technology, where the cell dimensions are approaching the sub-micrometer level.