Planar 1.2kV SiC MOSFETs with retrograde channel profile for enhanced ruggedness

The static and dynamic performance of Silicon Carbide (SiC) MOSFET rated for 1200V applications has been investigated. MOSFETs with a planar design and several different cell pitches have been fabricated. Special attention has been dedicated to the channel design, where a novel retrograde doping profile has been employed. For reference, a more common box profile channel has also been used. Turn-off measurements under high current and over voltage conditions reveal that the MOSFET body diode offers wide safe operating area capability. The MOSFETs feature exceptional ruggedness against long short circuit events, with the retrograde channel designs able to withstand the 10μ s industry standard specification.