A Critical View of IGBT Buffer Designs for 200 °C Operation

Different state-of-the-art buffer concepts compatible with ≥ 200 mm diameter, thin wafer technology ( ) have been optimized in enhanced planar insulated gate bipolar transistor (IGBT) technology for 1200 V and 1700 V, 150 A rated, 13.6 x 13.6 mm
²
devices and evaluated with the goal of reducing leakage currents to enable a stable operation up to Tj=200
^°
C. With the maximum punch through (MPT) ultra-thin field stop design in particular, we can produce devices with the lowest leakage currents up to Tj=200
^°
C. These devices were found to provide rugged RBSOA and soft switching, can withstand short circuit pulses as long as 10 μs and be thermally stable at Tj=200
^°
C.