High-temperature Performance of 1.2 kV-class SiC Super Junction MOSFET

SiC SJ MOSFETs had exhibited soft recovery characteristics at room temperature in comparison with that of non-SJ MOSFETs. In this study, the static and dynamic characteristics of the SiC SJ MOSFET at high temperature have been first demonstrated to clarify the mechanism of the soft recovery of the body-diode. The RonA at high temperature was drastically decreased by the SJ structure due to small drift resistance with suppressed injection level. The hard recovery characteristics are suppressed by the low injection level and large output capacitance ( Coss) compared with those in the Si SJ MOSFETs, indicating the great potential of SiC SJ MOSFET in various applications.