An Experimentally Verified 3.3 kV SiC MOSFET Model Suitable for High-Current Modules Design

In this study, an electrothermal compact model for SiC power MOSFETs is experimentally verified for the first time on a 3.3 kV device. Both the parameters determining the static behavior and those controlling the dynamic performances are calibrated over experimental data. The good agreement achieved proves the model scalability form 1.2 kV devices to 3.3 kV ones. Successively, to validate the good convergence properties of the model, an electrothermal simulation of a three-phase inverter consisting of 36 hard switched MOSFETs is performed.