InGaAsP/InP Uni-Traveling-Carrier Photodiode at 1064-nm Wavelength

High-speed back-illuminated InGaAsP/InP uni-traveling-carrier photodiodes (PDs) at 1064 nm were demonstrated with 3-dB bandwidth of 17.8 GHz at −5-V bias. PDs with 40-
$\mu \text{m}$
-diameter deliver RF output power as high as 19.5 dBm at 13 GHz. This structure can achieve low dark current density of
$1\times 10^{-8}$
A/cm
²
at −5-V bias and quantum efficiency of 45.2% at 1064 nm. An analytical model based on
$S$
-parameter fitting was built to extract parameter to assess the bandwidth limiting factors.