Thickness Dependence Characteristics of High-κ Al2O3 Based Metal-Insulator-Metal Antifuse

In this paper, a new metal-insulator-metal (MIM) antifuse with the high κ Al
₂
O
₃
deposited by atomic layer deposition (ALD) as the dielectric has been successfully fabricated. On this high κ antifuse structure, the very low on-state resistance was obtained under certain programming conditions. It is the first time that the antifuse on-state resistance has been found decreasing along with the increase of dielectric film thickness, which is attributed to a large current overshoot during breakdown, and the current overshoot is found to be larger with thicker Al
₂
O
₃
dielectric.