Design of Microbolometer by Polycrystalline Silicon in Standard CMOS Technology

Polycrystalline silicon films are widely used as sensor material in CMOS detectors. In this paper, we designed an air-bridge microbolometer in standard CMOS technology with Polycrystalline silicon multilayer sandwich structures. The device performance was then estimated under the optical and thermal simulators. it is found that the voltage responsivity and noise equivalent power of device is 4.6 KV/W and 1nW respectively. The proposed detector with high performance can be integrated in IC process to fabricate microbolometer arrays.