Simulation of 2D Layered Material Ballistic FETs using a Hybrid Methodology

In this work, we developed a systematic approach to simulate the 2D-layered material (graphene, MoS2, Phosphorene, etc....) based device combining conventional TCAD tool with Density Functional Theory (DFT). Physical parameters were simulated using the DFT tool and exported into TCAD device simulation. Our hybrid methodology shows adaptability to commercial computational tools and superior to the NEGF method in terms of computational cost and complexity. In this paper, we present I
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calibration showing a good agreement with existing results.