Unbalanced Layout Method for reduced the 4H-SiC JBS Diode temperature difference

This paper presents an unbalanced layout method for 4H-SiC JBS diode which can reduce the temperature difference and improve the effective on-resistance without the deterioration of off-state leakage at the same time. The resistance and leakage current of the JBS diode are the causes of the temperature rise of the device, which are in a trade-off relationship. The appropriate Schottky contact area of JBS diode is selected by 2D simulation and is optimized by unbalanced layout. The smaller Temperature difference and no degeneration of the resistance and leakage current are obtained from the simulation of the unbalanced layout JBS.