A Novel IE-Bi-MCT Structure Rated up to 6.5kV for Lower Losses

A novel electron injection enhanced Bi-mode MOS controlled thyristor structure (IE-Bi-MCT) is proposed in this paper, which is formed by introducing the electron injection enhancement (IE) effect into the structure of the base resistance-controlled thyristor (BRT). Taking 6500V IE-Bi-MCT as an example, the static and dynamic characteristics of the device are analyzed by Sentaurus-TCAD simulator, the results show that the proposed structure can operate in the thyristor-mode or in the IGBT-mode at different current density and achieve a good trade-off between on-state loss (E
_on
) and turn-off loss (E
_off
).