A Non-Ohmic Normally-off GaN RB-MISHEMT Featuring a Gate-Controlled Schottky Tunnel Junction

In this work, we present a non-Ohmic GaN RBMISHEMTs with a gate-controlled Schottky tunnel junction at source electrode. The thick Schottky tunnel barrier at the source electrode enables the device with enhancement mode operation, and the insulated gate close to Schottky-contact source is used to control the effective width of the tunnel barrier. When a positive gate bias is applied, the barrier width will be reduced, subsequently enhancing the tunneling probability. The Schottky-contact structure at the drain electrode can make the device be capable of unidirectional conduction. It is demonstrated by the simulated results that the proposed device can possess a low off-state leakage current and a low onset voltage at same time. Meanwhile, due to absence of Au-based Ohmic process, the device can be compatible with CMOS process and can also be manufactured at a lower temperature.