Investigation on the Modeling of 3300 V SiC MOSFET

This paper studies the modeling of the self-developed 3300 V / 5 A SiC MOSFET. After extracting parameters from output characteristics and capacitance characteristics by Advanced Design System (ADS), an accurate model is established. With this model, the simulation results are in good agreement with the experimental data. Furthermore, a series of double pulse tests are carried out to verify the accuracy of the model, laying solid foundation for further application.