Improving the Performance of Organic Field-Effect Transistors by Using WO3 Buffer Layer

Tungsten trioxide(WO
₃
) was employed to modify the source and drain copper electrodes in OFETs based on pentacene. The effect of WO
₃
with different thickness on devices was investigated. Through the XPS test, it is found that the electric charge transfer from Cu to WO
₃
modified layer at the contact area to form a high conductivity region. At the same time, the WO
₃
as a barrier layer, can effectively suppress the generation of the interface dipole layer between the Cu electrode and the pentacene layer, thus reducing the carrier injection potential.