Role of Drain and Gate Field Plates in Reforming Surface Electric Field of Lateral Power Devices

The Field Plate technique has a sophisticated impact on the surface electric field profile and breakdown characteristics of the lateral power device. Yet, the physical nature of the Field Plate effect remains unclear as a result of the complexity of conventional modeling approaches. In this paper, based on the effective concentration profile (ECP) concept, the field plates induced charge relocation can be equivalent to the variation of drift region doping profile making the complicated 2-D problem reduce to a simple 1-D problem. A novel1-D analytical model is proposed accordingly to qualitatively and quantitatively explore the physical insight of gate and drain field plate effect. The results obtained by the proposed model are found to be sufficiently accurate comparing with TCAD simulation results.