Asymmetric-Structure-Induced Self-Rectifying in Nanoscale HfO2-Based RRAM Array

Self-rectifying using a pure HfO
₂
layer with asymmetric structure was realized in Pt/HfO
₂
/n
⁺
-Si resistive random access memory (RRAM). The device exhibits repeatable self-rectifying behavior with high rectifying ratio (>10
⁵
). The electrostatic effect induced by the asymmetric structure of the HfO
₂
layer is responsible for the rectifying behavior. This kind of rectifying paves a new way for resolving the sneak current issue in RRAM arrays.