Triple reduction of threshold current for $1.3 \mu \mathrm{m}$ in as quantum dot lasers on patterned, on-axis (001) Si

Triple reduction of threshold current was achieved for
$1.3 \mu \mathrm{m}$
InAs quantum dot lasers on patterned, on-axis (001)Si. This was enabled by reducing the threading dislocation density, from
$7\times 10^{7}\ \text{to}\ 3\times 10^{6}cm^{-2}$
. © 2019 The Author(s)