Enhanced Photo Response at Two-Micron-Wavelength Using GeSn/Ge Multiple-Quantum-Well Waveguide

GeSn multiple-quantum-well rib waveguide on Si substrate was fabricated with vertical p-i-n photodiode structure and was characterized at two-micron-wavelength. Enhanced external photo response was achieved as compared to surface-illuminated counterparts, thanks to the waveguide scheme. © 2019 The Author(s)