Pseudo-Van Der Waals Epitaxy of MoS2 on Patterned and Planar GaN Substrates

N-MoS2/p-GaN diodes monolithically formed by pseudo-van der Waals epitaxy show well-defined rectifying behavior. Growth on patterned GaN substrates yields monolayer and few-layer MoS
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formation on the planar surface and the pyramids, respectively. © 2019 The Author(s)