Uniformly Tensile-Strained Germanium Enabled by a Recessed Nitride Stressor for Efficient Integrated Photodetectors at Longer Wavelengths

Germanium photodetector, formed with a self-aligned dry etching method, together with a tensile silicon nitride sidewall stressor, exhibits a strain profile with improved uniformity and a
$\sim 2\times$
enhancement on the quantum efficiency at the
$L$
-band, © 2019 The Author(s)