Tunable Performances in OTS Selectors Thanks to Ge3Se7-As2Te3

We present the study of compounds in the pseudo-binary Ge
₃
Se
₇
-As
₂
Te
₃
(GS-AT) system, targeting Back-End-of-Line (BEOL) Ovonic Threshold Switching (OTS) devices as access Selector for Crossbar Memory Arrays. Thanks to material analysis and the electrical characterization of fabricated OTS selectors, we show the possibility to tune the device electrical properties with the AT content. Therefore, based on our data, we describe the dependencies of the OTS electrical parameters, such as the threshold voltage and the leakage current, on the AT content and on the layer thickness. Finally, we demonstrate the capability for GS-AT alloys of a thermal stability at temperatures higher than 400°C, suitable for BEOL integration, and of outstanding endurance of more than 10
¹⁰
cycles. These results allow the comparison with state-of-the-art BEOL Selectors, showing the possibility to tune GS-based OTS performances based on the specifications required by the targeted application.