Wafer-level hybrid bonding for Cu/Interlayer-dielectric bonding

300mm-wafer-level bonding with Cu and interlayer dielectric layer has been successfully boned as hybrid bonding with design of the □ 1 μm pads with 2 μm pitch. During the course of the process, several process properties and parameters were optimzed. In particular, the properties of interlayer dielectrics on the bonding interface, such as water amount was one of the key factors for the bonding quality.