Obtaining Exact Electrical Parameters in Semiconductor Ohmic Contacts Using a Novel Electrode Pair Layout Design

This paper proposes a novel electrode pair (EP) layout method to obtain the exact electrical parameters in metal/semiconductor Ohmic contact, with focus on obtaining the specific contact resistance and the effective electrode width for IC design. The deduction process in extracting the contact parameters has been modelled, analyzed by TCAD simulations, and verified by the experimental data. The sheet resistance variance underneath the contact and outside the contact can be distinguished and obtained exactly by the proposed model. The work provides a distinct perspective to understand and quantify the electrical characteristics in a greater variety of semiconductor Ohmic contacts, and it can also assist engineers for a better electrode layout design.