High-Voltage 4H-SiC GTO Thyristor with Multiple Floating Zone Junction Termination Extension

In this paper, we demonstrate, for the first time, the multiple floating zone junction termination extension (MFZJTE) on high-voltage 4H-SiC GTO thyristor. The experimental results show that 4H-SiC GTO thyristor with MFZ-JTE achieves a high forward breakdown voltage of 7.6 kV, reaching about 93% of the theoretical value of 8.2kV. The MFZ-JTE with single implant step exhibits a wide process tolerance of implant doses for high breakdown voltage.