Realization and Performance Analysis of Facile-Processed $\mu$ -IDE-Based Multilayer HfS2/HfO2 Transistors

A new and interesting field-effect transistor (FET) structure based on multilayer HfS
₂
as a channel material, integrated with Al μ-interdigitated electrodes (μ-IDEs) and HfO
₂
as a gate dielectric is reported for the first time. The electrical performance of Al/HfO
₂
/HfS
₂
/Al
_μ
-IDE-based FETs exhibited the threshold voltage of ~ -2.72 V, generous subthreshold swing (SS) of ~70 mV/dec, substantial I
_ON
/I
_OFF
ratio of ~104, transconductance of ~1.5 μS, a significantly high electron mobility of ~56.7 cm
²
/Vs at V
_ds
= 1 V, and low gate leakage current of ~47 nA/cm
²
at V
_gs
= -1 V. Therefore, moderate threshold voltage, generous SS, robust current saturation, ultralow off-state leakage current, and low operating voltage of the fabricated Al/HfO
₂
/HfS
₂
/Al
_μ
-IDE, FETs show its potential for next-generation (NG) low-power FET applications.