Influence of Oxygen Molecules on Electrical Performance of Multilayer WSe2 TFT

In this study, high-performance multilayer WSe₂ thin-film transistor were demonstrated by rapid thermal annealing process in oxygen ambient. The experimental results indicate that the field-effect mobility of hole could be enhanced 10³ times larger than that of the device before annealing treatment. The on/off-current ratio will up to so high as 10⁷. The enhancement results from the rearrangement of charge carriers both on the top and at the bottom of the channel due to the adsorbed oxygen molecules.