Improvement on Ferroelectricity and Endurance of Ultra-Thin HfZrO2 Capacitor with Molybdenum Capping Electrode

The capping metal plays an important role on HfZrO
₂
(HZO) crystallization for ferroelectric phase. The Mo top electrode MIM capacitor is demonstrated with high remnant polarization and endurance as compared with TaN electrode. The optimized data retention for 500°C annealing device presents (>30) $\mu$ C/cm
²
up to 2x10
⁴
sec and slightly degradation extrapolated to 3x10
⁸
sec (10 years). The Mo electrode exhibits higher 2P
_r
and excellent endurance performance ((>10)
⁵
cycles) as compared with that of TaN electrode. It is beneficial for promising ultra-thin FE-HZO as the guidelines for low-power CMOS/memory applications.