Hopping Conduction Temperature Investigations on High Retention Electrochemical Metallization MgO-based Resistive Switching Devices in the Low Resistance State

We report hopping conduction in Pt/MgO/Cu resistive switching memory (RSM) devices predominantly in the low resistance state. Current-voltage measurements of Pt/MgO/Cu RSM devices exhibited good cycle-to-cycle variability. Promising DC endurance exceeding 2000 cycles and retention exceeding 10 years at 125°C were obtained at 10
³
-10
⁴
ON/OFF ratio within a consistent range of SET and RSET voltages. Multi-level state properties were also exhibited, while TEM and EDX studies suggested the possibility of filament in Pt/MgO/Cu RSM devices.