TCAD Analysis of Source-Side Injection Program of FinFET Split-Gate MONOS

Program characteristics of FinFET split-gate metal oxide nitride oxide silicon (SG-MONOS) is analyzed using TCAD simulation. Source-side injection (SSI) program is found to be insensitive to the field enhancement at Fin corners in contrast to FN program, which shows the robustness of SSI program of FinFET SG-MONOS to Fin shape variation in the fabrication process. The simulation also indicates that incremental step pulse programming (ISPP) combined with SSI program reduces the field enhancement and improves oxide reliability.