Simultaneous doping / etching (SDE) process of multilayer graphene on Ni for low resistance metallization

In order to form a multilayer graphene film of low resistance without transferring to the device, we have developed a simultaneous doping / etching (SDE) process to remove the Ni catalyst layer during MoCl5 intercalation doping to CVD-grown MLG on Ni catalyst. The obtained sheet resistance of the doped MLG (~ 20 nm thick) was 40% lower than the MLG/Ni (~ 320 nm) before the SDE process.