Effect of Post Radiation Annealing on the TID Response of 0.18μm bulk NFETs

In this paper, we investigate and report the total ionizing dose (TID) response of 0.18μm bulk n-channel MOSFETs subjected to a total cumulative dose of lKRad and lMRad by gamma radiations. The n-channel devices are characterized for their pre- and post-radiation DC response. Device parameters like $\mathrm{\triangle V_{tlin},\ \triangle V_{tsat},\ \triangle}$SS, $\mathrm{\triangle I_{ON}}$ and $\mathrm{\triangle I_{OFF}}$ are reported as figures of merit. Later, these post-rad devices are annealed at room temperature for 24 hours. We report that post anneal, some radiation induced damage recovery is ensued. The parameters $\mathrm{\triangle V_{tlin},\ \triangle V_{tsat},\ \triangle}$SS and $\mathrm{\triangle I_{ON}}$ recover by 86%, 98%, 72% and 99% respectively. Whereas $\mathrm{\triangle I_{OFF}}$ recovers by 21% only. Our results show that a room temperature anneal for 24 hours is sufficient to recover the radiation induced interface traps but not for the charges trapped in the spacer oxide.