Physics and Modeling of Two-dimensional (2D) RF Transistors and Photodetectors

Atomistic non-equilibrium Green's function approach has been used to predict the unity current gain cutoff frequency (f
_t
) and the maximum oscillation frequency (f
_max
) for a wide range of two-dimensional (2D) channel materials. Dependence of these RF figures of merit (FOMs) on intrinsic material parameters has also been analyzed. Separately, a dual-trap model governing the trade-off between responsivity and speed of 2D photodetectors has been validated in rhenium disulfide (ReS
₂
) photodetectors through gate bias and device architecture variations.