Integration of Split-gate Flash Memory in 130nm BCD technology For Automotive Applications

In this work we successfully integrated the split-gate SuperFlash® ESF1 cell into our 130nm BCD (Bipolar-CMOS-DMOS) platform for automotive applications. The platform enhances the modularity of flash macro in addition to logic devices, high performance power devices up to 85V as well as complimentary analog devices such as a BJT, MIM and Poly Resistor. Besides maintaining BCD device performance, the embedded flash operating temperature range from - 40°C to 170°C, programmability, chip erase & read access time well meet the specifications. Endurance cycling of up to 20k cycles and data retention of over 20 years well satisfy AECQ-100 Automotive Grade 0 requirements.