Fundamental study on reducing on-resistance by introducing strain into silicon vertical power devices

In this paper, we examine the feasibility of reducing the on-resistance by introducing strain into the drift layer of Si vertical power devices. The strain effect on the resistance to vertical conduction in the n
^-
-Si layer was evaluated using a four-point bending method. The experimental data correspond well with the theoretical values calculated using the piezoresistive coefficient. These results indicate that strain management is a promising method for reducing the on-resistance of Si vertical power devices.