EDMOSFET Switching Device using Metal Field Plate Design

This paper explores a low-cost method to improve the Breakdown Voltage (BV) of a Switching Device without compromising on the Source-Drain Resistance (RDSON). This can be achieved by introducing a metal field plate over the Gate and the extended Drain region of the EDMOSFET. This switching device shows negligible degradation in current-voltage performance (i.e. Drain Current in the linear region and saturation region).