Modeling of Lateral Migration Mechanism During the Retention Operation in 3D NAND Flash Memories

In this paper, we analyzed lateral migration mechanism during the retention operation in 3-D NAND flash memories. Retention characteristics for different trap energy levels (E_t) of charge trap layer were investigated through Technology computer-aided design (TCAD) simulation and modeled through stretched exponential function. In addition, time-constant (τ) at various temperatures were extracted through the modeled equation. Finally, the activation energy (E_a) of lateral migration mechanism was extracted by adopting the Arrhenius relationship.